Tag - GaAs mHEMT epi wafer

GaAs mHEMT epi wafer

We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structures: No.1 GaAs Epi Wafer for Metamorphic High Electron Mobility Transistor Epi layer Material Mole of In Thickness(Å) Dopant Concentration 7 InGaAs cap 0.53 200 Si 6.0E18 cm-3 6 InAlAs barrier 0.52 – – – 5 Planar doping – – Si 6.0e12 cm-2 4 InAlAs spacer 0.52 45 – – 3 InGaAs channel 0.53 – – – 2 InAlAs buffer 0.52 – – – 1 InAlAs M-buffer – –       4 inch S.I GaAs susbtrate, Mobility: 9230 cm2/V·s, Ns: 3.26E12 cm-2   No.2 GaAs mHEMT Wafer N+ In0.53Ga0.47As 20nm [...]