Tag - GaAs mHEMT epi wafer

GaAs mHEMT epi wafer

GaAs mHEMT epi wafer We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structure: N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3) N+ InP etch stopper 5nm (n=5×10^18 cm^-3) i- In0.52Al0.48As Schottky barrier 10nm Si-delta-doping (n=6×10^12 cm^-2) i- In0.52Al0.48As spacer 4nm i-In0.53Ga0.47As channel 15nm In0.52Al0.48As buffer 300nm metamorphic buffer 300nm (linearly graded from substrate to In0.53Ga0.47As) S.I. GaAs substrate Source: PAM-XIAMEN If [...]