GaAs mHEMT epi wafer

GaAs mHEMT epi wafer

We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structures:

No.1 GaAs Epi Wafer for Metamorphic High Electron Mobility Transistor

Epi layer Material Mole of In Thickness(Å) Dopant Concentration
7 InGaAs cap 0.53 200 Si 6.0E18 cm-3
6 InAlAs barrier 0.52
5 Planar doping Si 6.0e12 cm-2
4 InAlAs spacer 0.52 45
3 InGaAs channel 0.53
2 InAlAs buffer 0.52
1 InAlAs M-buffer    
  4 inch S.I GaAs susbtrate, Mobility: 9230 cm2/V·s, Ns: 3.26E12 cm-2

 

No.2 GaAs mHEMT Wafer

N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3)
N+ InP etch stopper 5nm (n=5×10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6×10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from substrate to In0.53Ga0.47As)
S.I. GaAs substrate

Source: PAM-XIAMEN

 
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