GaAs mHEMT epi wafer

We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below typical structures:

No.1 GaAs Epi Wafer for Metamorphic High Electron Mobility Transistor

Epi layer	Material	Mole of In	Thickness(Å)	Dopant	Concentration
7	InGaAs cap	0.53	200	Si	6.0E18 cm^-3
6	InAlAs barrier	0.52	–	–	–
5	Planar doping	–	–	Si	6.0e12 cm^-2
4	InAlAs spacer	0.52	45	–	–
3	InGaAs channel	0.53	–	–	–
2	InAlAs buffer	0.52	–	–	–
1	InAlAs M-buffer	–	–
	4 inch S.I GaAs susbtrate, Mobility: 9230 cm²/V·s, Ns: 3.26E12 cm^-2

No.2 GaAs mHEMT Wafer

N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3)
N+ InP etch stopper 5nm (n=5×10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6×10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from substrate to In0.53Ga0.47As)
S.I. GaAs substrate

Source: PAM-XIAMEN

For more information, please contact us email at [email protected] and [email protected].

2013-11-19 GaAs mHEMT epi wafer

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