Lithium Niobate(LNOI) with Metal Electrode
There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric [...]
2018-08-22meta-author
Glass Wafer, Including Bf33, Quartz, Ito Glass, Alkali free glass substrate
In Stock, But Not Limited To The Following.
Wafer No.
Size
Polish
Orientation
Thickness(um)
Quantity(Pcs)
PAM-XIAMEN-WAFER-#B1
4″BF33 Glass
DSP
—
500um
27
PAM-XIAMEN-WAFER-#B2
4″BF33 Glass
DSP
—
1000um
8
PAM-XIAMEN-WAFER-#B3
4″ Sapphire
—
—
500um
25
PAM-XIAMEN-WAFER-#B4
6″BF33 Glass
DSP
—
500um
15
PAM-XIAMEN-WAFER-#B5
Glass 90*90
DSP
—
700um
3
PAM-XIAMEN-WAFER-#B6
ITOConductive Glass
20*20
—
1.1mm
15
PAM-XIAMEN-WAFER-#B7
2″Quartz
DSP
—
1.2mm
50
PAM-XIAMEN-WAFER-#B8
4″ Sapphire
SSP
C
650um
16
PAM-XIAMEN-WAFER-#B9
4″ Sapphire
SSP
C
650±30um
75
PAM-XIAMEN-WAFER-#B10
2″ Sapphire
SSP
R
430um
25
PAM-XIAMEN-WAFER-#B11
8″Glass
DSP
—
700um
109
PAM-XIAMEN-WAFER-#B12
6″Sapphire
SSP
—
600um
31
PAM-XIAMEN-WAFER-#B13
4″BF33 Glass
DSP
—
1mm
35
PAM-XIAMEN-WAFER-#B14
2″ Sapphire
DSP
—
100um
12
PAM-XIAMEN-WAFER-#B15
4″BF33 Glass
DSP
—
200um
18
PAM-XIAMEN-WAFER-#B16
4″ Sapphire
DSP
—
500um
20
PAM-XIAMEN-WAFER-#B17
4″Quartz
DSP
—
1mm
8
PAM-XIAMEN-WAFER-#B18
2″Quartz
DSP
—
1mm
10
PAM-XIAMEN-WAFER-#B19
2″ Sapphire
DSP
—
1mm
74
PAM-XIAMEN-WAFER-#B20
2″ Sapphire
SSP
M
430±15um
50
PAM-XIAMEN-WAFER-#B21
2″ Sapphire
SSP
C
430um
850
PAM-XIAMEN-WAFER-#B22
2″ Sapphire
DSP
—
300um
425
PAM-XIAMEN-WAFER-#B23
6″BF33 Glass
DSP
—
675um
17
Moreover, we can supply Alkali free glass substrate, [...]
2019-11-27meta-author
Free-standing Gallium Nitride
Item No.
Type
Orientation
Thickness
Grade
Micro Defect Density
Surface
Usable area
N-Type
PAM-FS-GaN50-N
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-N
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-N
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-N
dia.38mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN25-N
dia.25.4mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN15-N
14mm*15mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN10-N
10mm*10.5mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN5-N
5mm*5.5mm, N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
SEMI-INSULATING
PAM-FS-GaN50-SI
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-SI
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-SI
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-SI
dia.38mm,N [...]
Lithium Niobate(LN) Thin Film on Insulator
Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc.
Single crystal lithium niobate thin films are of great significance for the development of [...]
2018-08-22meta-author
Silicon Nitride Wafer Si3N4 Thin Film By LPCVD
In Stock, But Not Limited To The Following.
Wafer No.
Wafer Size
Polished-Side
Type/Orientation
Si3N4 Thickness
Wafer Thickness(um)
Resistivity(Ohm.Cm)
Quantity(Pcs)
PAM-XIAMEN-WAFER-#N1
2″
DSP, both Si3N4
N100
200nm
400±15
3-6
25
PAM-XIAMEN-WAFER-#N2
2″
SSP,both Si3N4
P100
200nm
400±15
<0.0015
24
PAM-XIAMEN-WAFER-#N3
2″
Si3N4 with Cu
48.8*3mm
—
—
—
1
PAM-XIAMEN-WAFER-#N4
3″
DSP, both Si3N4
—
150nm
—
—
2
PAM-XIAMEN-WAFER-#N5
4″
SSP,both Si3N4
N100
40nm
500±10
<0.02
2
PAM-XIAMEN-WAFER-#N6
4″
DSP, both Si3N4
N100
50nm
510-540
2-4
9
PAM-XIAMEN-WAFER-#N7
4″
DSP, both Si3N4
P type
50nm
200±10
<0.02
5
PAM-XIAMEN-WAFER-#N8
4″
SSP,both Si3N4
N100
95nm
525±15
1-10
22
PAM-XIAMEN-WAFER-#N9
4″
SSP,both Si3N4
N100
100nm
500±10
<0.05
7
PAM-XIAMEN-WAFER-#N10
4″
DSP, both Si3N4
P100
200±20nm
300±10
5-10
50
PAM-XIAMEN-WAFER-#N11
4″
DSP, both Si3N4
N100
100nm
200±15
1-15
19
PAM-XIAMEN-WAFER-#N12
4″
DSP, both Si3N4
P100
150nm
500±25
10-20
1
PAM-XIAMEN-WAFER-#N13
4″
SSP,both Si3N4
P100
200nm
525±25
10-20
25
PAM-XIAMEN-WAFER-#N14
4″
SSP,both Si3N4
P type
200nm
500±10
<0.05
15
PAM-XIAMEN-WAFER-#N15
4″
DSP, both [...]
2019-11-27meta-author
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
P/ZnO
N/A
N/A
N/A
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth [...]