PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8
Item5, 125pcs
Silicon wafer:
i. Diameter:100 mm ± 0.5 mm,
ii. Thickness: 525μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
Grade: [...]
2020-03-27meta-author
Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support [...]
2020-03-10meta-author
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
2022-09-06meta-author
PAM XIAMEN offers LSGM single crystal substrate.
Now LSGM (La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ) single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]
2019-05-10meta-author
High transparency AlN template on sapphire and silicon substrate are available from PAM-XIAMEN, which are suitable for making high-frequency BAW, SAW devices and power electronic. Aluminum nitride (AIN) template not only has the characteristics of AIN piezoelectric film, but also has the characteristics of higher sound propagation rate, [...]
2019-04-26meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer With Notch
It will be carried out after the silicon ingot is made. A flat angle is cut on the silicon ingot below 200 mm, which is called flat. In order to reduce waste, only a small round hole [...]
2020-06-15meta-author