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InP/InGaAs/InP epi wafer
 
We can offer 2" InP/InGaAs/InP epi wafer as follows:
 
InP Substrate:
 
Indium Phosphide wafers,
P/E 2"dia×350+/-25um,
n-type InP:S
(100)+/-0.5°,
EDP<1E4/cm2.
One-side-polished, back-side matte etched, SEMI Flats.
 
EPI layer :
 
Epi 1: InGaAs:(100)
       Thickness:100nm,
       etching stop layer
 
Epi 2: InP:(100)
       Thickness:50nm,
        bonding layer
 
Source: PAM-XIAMEN
 
If you need more information about InP/InGaAs/InP epi wafer , please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.