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Structure for InGaAs photodetectors

 

We offer the wafer structure InGaAs photodetectors as follows:

 

Material

X

Thickness (nm)

Dopant

Doping concentration

InP

 

1000

N (Sulfur)

3e16

In(x)GaAs

0.53

3000

U/D

5e14

InP

 

500

N (Sulfur)

3e16

Substrate

 

 

SI (Fe)

 

 

Source:PAM-XIAMEN

 

For more information, please visit our website:http://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.