SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
2018-06-28meta-author
5-4-4-3 SiC Epilayer Doping
In-situ doping during CVD epitaxial growth is primarily accomplished through the introduction of nitrogen (usually) for n-type and aluminum (usually trimethyl- or triethylaluminum) for p-type epilayers . Some alternative dopants such as phosphorus and boron have also been investigated for the [...]
2018-06-28meta-author
2-6.Wafer Primary Flat
The flat of longest length on the wafer, oriented such that the chord is parallel with a specified low index crystal plane; major flat.
The primary at is the {10-10} plane with the at face parallel to the <11-20> direction.
2018-06-28meta-author
2-9.(Area) Wafer Contamination
Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2018-06-28meta-author
2-29.Resistivity
The resistance to current flow and movement of electron and hole carries in the silicon carbide. Resistivity is related to the ratio of voltage across the silicon to the current flowing through the silicon carbide per unit volume of silicon carbide. The units for [...]
2018-06-28meta-author
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2018-06-28meta-author