3″ CZ Si Lapped Wafer

3″ CZ Si Lapped Wafer

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3″ Silicon Wafer-1

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100-200 SEMI Prime p-type Si:B [100] 3″ 380 P/E FZ 7,000-10,000 SEMI Prime p-type Si:B [100] 3″ 350 P/P FZ 1-5 SEMI Prime p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5-10.0 SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee p-type Si:B [100] 3″ 890 ±13 P/P FZ 0.5-10.0 SEMIt, TTV<8μm p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000-10,000 SEMI TEST (has scratches), in hard cst p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, TTV<5μm p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime n-type Si:P [100] 3″ 380 P/P FZ 7,000-18,000 SEMI Prime n-type [...]

2019-03-06meta-author
InSb Wafer

PAM XIAMEN offers InSb Wafer. InSb Ge-doped InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1 InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]

2019-05-07meta-author
Solar Cell Structure Epitaxially Grown on InP Wafer

InP epitaxial wafers with solar cell structure that a p-InGaAs lattice matched to n-InP substrate can be provided by PAM-XIAMEN. Indium phosphide is one of the main group III-V compound semiconductors for manufacturing multi-compound solar cells. These multi-compound solar cells mainly include GaAs, InP, [...]

2021-11-19meta-author
3″ Silicon Wafer-15

PAM XIAMEN offers3″ Silicon Wafer-15 3″ Si wafer(32825), R≤200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> direction 5. Resistivity: ≤150Ωcm 6. Primary surface: semi std 7. Secondary surface: none 8. Thickness: 380±25μm 9. Overall thickness variation on the plate is [...]

2019-11-13meta-author
GaAs Crystal with Low Defects and Dopants

Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]

2021-06-28meta-author
4″ Silicon Wafer-6

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 300 P/P 5-10 SEMI Test, Scratched and unsealed. Can be re-polished for extra fee p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (in Opened cassette), 2Flats p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime p-type Si:B [100] 4″ 380 P/E 5-10 SEMI TEST (with bad surface) p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Prime, hard cst, Back-side slightly darker than normal p-type Si:B [100] 4″ 380 P/E 5-10 SEMI Test, Dirty wafers, can be cleaned for extra fee p-type Si:B [100] 4″ 380 BROKEN 5-10 Broken P/E Wafers, [...]

2019-03-05meta-author