3″ CZ Si Lapped Wafer

PAM XIAMEN offers 3″ CZ Si Lapped Wafer

3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat

For more information, send us email at [email protected] and [email protected]

2021-01-06

4″ FZ Silicon Ingot with Diameter 100.7±0.3mm

PAM XIAMEN offers 4″ FZ Silicon Ingot with Diameter 100.7±0.3mm Si wafers Orientation (100) Dia 6” x thickness 500µm Type n or p 1-20 ohm.cm One side polished For more information, send us email at [email protected] and [email protected]

2020-05-27meta-author

PAM-XIAMEN Offers GaN on Sapphire substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN on Sapphire substrate and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]

2017-12-28meta-author

Effect of Al-induced crystallization on CdZnTe thin films deposited by radio frequency magnetron sputtering

High quality polycrystalline CdZnTe films were prepared by aluminum induced crystallization (AIC) and radio frequency (r.f.) magnetron sputtering. The crystallinity, morphology and optical property of both as-deposited and AIC samples were investigated by X-ray diffraction (XRD), and atomic force microscopy (AFM), as well as Raman and [...]

2013-11-13meta-author Aluminum induced crystallization (AIC), CdZnTe films

4″ Silicon Wafer-2

PAM XIAMEN offers 4″ Silicon Wafer.Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Commentn-type Si:P [100] 4″ 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafersn-type Si:P [100] ±0.2° 4″ 380 ±10 P/E FZ >3,500 SEMI TEST , 1 Flatn-type Si:P [100] 4″ 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, TTV<5μmn-type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, MCC Lifetime > 1,000μs,n-type Si:P [100] 4″ 400 P/E FZ 2,000-6,500 SEMI Prime, Lifetime>1,000μsn-type Si:P [100] 4″ 915 ±10 E/E FZ 2,000-3,000 1Flat at [100]n-type Si:P [100] 4″ 300 L/L FZ 1,100-1,600 SEMIn-type Si:P [100] ±1° 4″ 200 [...]

2019-03-05meta-author

SOS( Silicon on Sapphire)

PAM XIAMEN offers SOS( Silicon on Sapphire). Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 [...]

2019-05-16meta-author

P-type Silicon Carbide Substrate and IGBT Devices

P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor). IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar [...]

2021-04-08meta-author

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[email protected] [email protected]

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3″ CZ Si Lapped Wafer

3″ CZ Si Lapped Wafer

PAM XIAMEN offers 3″ CZ Si Lapped Wafer

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