3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Product Specifications PAM XIAMEN offers Freestanding GaN Substrate 2″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 2″(50.8)+/-1mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 16+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 8+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation Density <5×10^6cm-2 Marco Defect Density A grade<=2cm-2 B grade>2cm-2 TTV <=15um BOW <=20um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded ≥ 90 % Usable Area 1.5″GaN Free-standing Substrate Item PAM-FS-GaN50-N PAM-FS-GaN50-SI Conduction Type N-type Semi-insulating Size 1.5″(38.1)+/-0.5mm Thickness 260+/-20um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length 12+/-1mm Secondary Flat Location (11-20)+/-3° Secondary Flat Length 6+/-1mm Resistivity(300K) <0.5Ω·cm >10^6Ω·cm Dislocation [...]
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated [...]
5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]
PAM XIAMEN offers 2″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 P Boron CZ -111 .001-.005 300-350 P/E PRIME 50.8 P Boron CZ -110 1-20 225-275 P/P PRIME 50.8 P Boron CZ -110 1-20 250-300 P/E PRIME 50.8 Any Any CZ Any Any 200-500 P/E TEST 50.8 Any Any CZ Any Any 800-1000 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Any Any CZ Any Any 4900-5100 P/E TEST 50.8 Intrinsic Undoped FZ -100 5000-10000 275-325 P/E PRIME 50.8 SI. Undoped VGF -100 >1E7 325-375 P/E PRIME 50.8 N Si VGF 4E+18 250-300 P/E EPI 50.8 N Si VGF -100 325-375 P/E PRIME 50.8 P Zn VGF -100 325-375 P/E PRIME 50.8 Undoped CZ -100 >30 300-350 P/P EPI 50.8 Undoped CZ -100 >30 350-400 P/E EPI 50.8 N Sb CZ (100)off 6-9 tow .01-.04 150-200 P/E EPI 50.8 N Sb CZ -100 .005-.02 300-350 P/P EPI 50.8 N Sb CZ -100 .005-.02 350-400 P/E EPI 50.8 P Ga CZ -100 .01-.04 300-350 P/P EPI 50.8 P Ga CZ -100 .01-.04 350-400 P/E EPI 50.8 R-Axis CZ 300-350 P/E TEST 50.8 N Si VGF -100 275-325 P/E PRIME 50.8 P Zn VGF -100 275-325 P/E PRIME 50.8 Si Fe VGF -100 5000000 325-375 P/E PRIME 50.8 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 50.8 Shipping Cassette ePak Holds25Wafers Clean Room For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.0028-0.0035 Ohmcm 150 ± 0.5 mm 440 ± 20 µm 40 5 40 6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° < 0.0035 Ohmcm 150 [...]
PAM XIAMEN offers Gold Single Crystal & Substrate. PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface roughness. Au (Gold) [...]
