Soraa, the world’s leading developer of GaN on GaN ( gallium nitride on gallium nitride ) – solid state lighting technology, announced the launch of its flagship product, the Soraa LED MR16 lamp. The new product is the first LED lamp to provide superior performance to [...]
2012-05-21meta-author
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer.
Si wafer
Dia 2” x 260μm
FZ
(111)
Type n doped P
R > 300 ohm.cm
2 side spolished
With flats
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-01meta-author
PAM XIAMEN offers 1″Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Description
PAM2266
25.4mm
P
B
<111>
>1000
20000um
DSP
FZ
PAM2267
25.4mm
P
B
<100>
ANY
400um
SSP
Thickness is: 400+/-100um.
PAM2268
25.4mm
ANY
<100>
500um
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM2269
25.4mm
Undoped
Undoped
<111>
>2000
280um
SSP
Intrinsic FZ
PAM2270
25.4mm
Undoped
Undoped
<100>
>5000
73.5um
DSP
FZ, Float Zone
PAM2271
25.4mm
P
B
<100>
.01-.05
500um
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2271
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM2272
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-19meta-author
CdZnTe monocrystalline wafers
Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows:
S.No.
Parameters
Detail
1
Undoped Cd1_xZnxTe Single crystal substrates
From wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free [...]
PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices.
1. GaN on SiC HEMT Wafer for RF Application
No.1 GaN-on-SiC HEMT Epistructure
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
1300~2200 [...]
2019-05-17meta-author
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as [...]
2013-04-03meta-author