GaN LED structure grown on nano-scale patterned sapphire (Al2O3) substrate can be provided with high efficiency of photoluminescence and electroluminescence. However, because of the high customization of the epitaxial process in the InGaN/GaN-quantum wells based LED heterostructure, we cannot get the optimal solution for [...]
2022-01-06meta-author
PAM XIAMEN offers 4″FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 5000 – 10000 Ohm.cm
WITH [...]
2019-07-05meta-author
PAM XIAMEN offers 8″ Silicon Wafer
8″ Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Chamfer width 700-1000 μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-09-03meta-author
III-V group compound GaInP is an efficient luminescent ternary mixed crystal material, which can be grown on InP substrate. PAM-XIAMEN can offer GaInP thin film growth on InP substrate for various applications, like photoluminescent testing. More about the GaInP / InP epi wafer please see [...]
The long-wavelength InGaAsN quantum well laser based on GaAs substrate is one of the most promising development directions. InGaAsN laser structures are usually grown by molecular beam epitaxy (MBE) or metal organic vapor deposition (MOCVD). InGaNAs material is a promising material for long wavelength [...]
In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
2019-12-30meta-author