When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity of silicon carbide should be very high, but [...]
2020-08-25meta-author
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
2018-08-16meta-author
Silicon carbide (SiC) materials have significant advantages in key characteristics such as bandgap width and critical breakdown field strength, and can be used to make high voltage Schottky diodes. Currently, 650V-1700V SiC Schottky diodes are widely used in consumer, industrial, automotive and other fields. Schottky [...]
2023-11-08meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes
Published by:
(Electrical Engineering) in The [...]
2019-10-31meta-author
PAM-01A is a single channel preamplifier. It can be used as a key part for semiconductor detector, including CZT and Si, or others, including scintillator and gas.
1. Charge Sensitive Pre-amplifier Specification
Power Consumption
<0.43W
Power
±12V
Output Resistance
50 Ω
Equivalent Noise
ENC: 130e–
Working temperature
-20℃-+40℃
Falling edge time
250 ~ 400us
Input charge range
<1000fc
Gain
G=10mv/fc
Dimension
100×76×44mm3
Weight
265g
2. Charge [...]
2019-04-25meta-author