PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author
PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Boron
P
100
0,0 ± 0,0
110 ± 0,20
0.0 ± 0.1 °
1 – 20 Ohmcm
150.0 ± 0.2 mm
675 ± 5 µm
60
3
6
DSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
30 – [...]
2019-02-25meta-author
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching
The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]