FZ grown high-resistance silicon wafer is offered by PAM-XIAMEN for the fabrication of MEMS (Micro-electro Mechanical System). Silicon wafer is the common material for manufacturing integrated circuits in consumer electronics. Due to the availability and competitive price with high quality of silicon material, it [...]
2021-11-03meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
PAM-XIAMEN offers 650V GaN FETs chip for fast charge. In current market, gallium nitride fast charging sources mainly use 650V GaN chip (GaN FETs) as power switches, and the high-frequency characteristics of gallium nitride are used to make terminal fast charging products smaller in size and higher [...]
2020-11-24meta-author
With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been widely used in people’s daily life and work. In order to ensure the quality and cost control in the production process of the semiconductor device, [...]
2022-09-26meta-author
The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]
2021-06-17meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.25 °
1.5 ± 0.5 Ohmcm
150 ± 0.5 mm
280 ± 2.5 µm
30
1,25
30
6
DSP
Phosphorus
N
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.5°
1-4 Ohmcm
150 [...]
2019-02-25meta-author