PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine.
CZT planar detector
1. [...]
2019-04-23meta-author
As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices [...]
2021-05-17meta-author
Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface [...]
2019-03-27meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4″ Si substrate wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back [...]
2019-07-05meta-author
PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author
1 – Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology
This chapter reviews various processes for manufacturing SOI wafers. There is a specific focus on Separation by IMplantation of OXygen (SIMOX) and on technologies based on direct bonding (bonded silicon-on-insulator (BSOI), epitaxial layer transfer process (Eltran®), [...]