PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
1. Specification of Prime Silicon Wafer by FZ
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE [...]
2019-07-04meta-author
Electronic lifetime engineering using low-temperature GaAs in a quantum well structure
Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm [...]
2014-01-27meta-author
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide
2″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
Study of Highly Pixelated CdZnTe Detector for PET Applications
We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its [...]
PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm.
4″ Si wafer
4″ Si, N-type, <100>, SSP
resistivity3000-4000Ωcm
thickness500±20μm
carrier lifetime>1ms(1000μm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]
2019-08-22meta-author