PAM-01C1 integrated customized hemispherial electrode CZT detector and low noise charge sensitive preamplifier. It can convert X/γ-ray into exponential decay signal. Working with five-pin cable, high and low power supply, main amplifier,those signals will be direct into multi-channel pulse analyzer and then the energy spectrum will be [...]
2019-04-23meta-author
Silicon carbide (SiC) wafer material supplied by PAM-XIAMEN, like SiC substrate (link: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html) is widely used in aerospace, radar communication, automotive industry and semiconductor industry due to its excellent properties such as high thermal conductivity, high strength, high temperature resistance and radiation resistance. However, [...]
2022-07-15meta-author
The typical structure of InAs quantum dot (QD) layers on InP substrate is available with wavelength of 1.55um for QD photodetector. Quantum dot is called semiconductor nanocrystals (NCs), which refer to three-dimensional constrained nanomaterials with a radius smaller than or close to the exciton [...]
2021-09-17meta-author
Abstract
Advanced characterisation plays an important role for further improvements of the cost effectiveness ($/Wp) of solar cells. This paper presents an overview of advanced characterisation techniques that are presently being used for the analysis of silicon wafer solar cells, either in the laboratory or in the [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]