Fundamental issues of device-relevant low temperature GaAs and related materials properties
In the past few years, a flurry of activity has been devoted to the studies and device applications of non-stoichiometric GaAs grown by molecular beam epitaxy at the extremely low temperature (LT) of 250 [...]
(Al,In)GaN laser diodes with optimized ridge structures
We develop (Al, In)GaN ridge waveguide laser diodes in the violet-blue spectral region. Varying the indium content of the InGaN quantum wells, we tailor the emission wavelength of our devices for specific applications in the range from 390 [...]
2013-03-27meta-author
PAM XIAMEN offers 1″&1.5″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
25.4
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
Intrinsic
Undoped
FZ
-100
> 20000
275-325
P/E
PRIME
25.4
N
Sb
CZ
-100
.5-40
200-250
P/E
PRIME
25.4
N
Sb
CZ
-100
5-40
225-275
P/E
PRIME
25.4
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
25.4
Shipping Cassette
ePak
Holds25Wafers
Clean Room
38.1
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been widely used in people’s daily life and work. In order to ensure the quality and cost control in the production process of the semiconductor device, [...]
2022-09-26meta-author
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author