PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 4″{100.0±0.2}Ø×500±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
PAM XIAMEN offers Fe2O3 crystal .
Alpha-Fe2O3 Crystal (0001) < 0.4deg, Edge oriented, 5x5x1.0mm,1SP
Specifications:
Crystal: Alpha-Fe2O3 natural source with defects
Purity: >99.95%
Size: [...]
2019-04-19meta-author
PAM XIAMEN offers Mg – Metal Foil.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg ) [...]
2019-05-08meta-author
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
2019-12-09meta-author
The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the [...]
2019-12-09meta-author