PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author
Fabry-Perot laser (FP-LD) is the most common semiconductor laser. At present, the fabrication technology of FP-LD used in optical fiber communication has been quite mature, and the structure of double heterojunction multiple quantum wells active layer, carrier and light limited structure is widely used. [...]
2023-01-13meta-author
PAM XIAMEN offers ZnO thin film on Sapphire.
ZnO Film (0.5 um) on Sapphire(0001), 10x10x0.5mm,1sp , undoped
ZnO Film (0.5 um) on Sapphire(0001), 5x5x0.5mm ,1sp, undoped
ZnO Film on Sapphire(0001), 2″x0.5mm, undoped , ZnO: 0.5 um
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-04-29meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
500-550
P/E/WTOx
100
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
100
N
Phos
CZ
-100
50-70
4850-5050
P/E
PRIME
100
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
100
N
Phos
CZ
-100
>10
9900-10100
P/P
PRIME
100
N
Phos
CZ
-111
1-10
4000-6000
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/E
PRIME
100
N
Phos
FZ
-111
> 20000
275-325
P/P
PRIME
100
N
Phos
FZ
-111
2000-4000
275-325
P/P
PRIME
100
N
Phos
CZ
-111
450-500
P/P
PRIME
100
N
Phos
FZ
-111
> 20000
475-525
P/P
PRIME
100
N
As
CZ
-111
.001-.005
500-550
P/E
PRIME
100
N
Phos
CZ
-111
1-20
500-550
P/E
PRIME
100
N
Phos
FZ
-111
2000-4000
500-550
P/P
PRIME
100
N
Phos
CZ
-111
1-20
4800-5200
P/E
PRIME
100
N
Phos
CZ
-111
1-3
11300-11500
P/E
PRIME
100
N
Phos
CZ
-110
450-500
P/P
PRIME
100
N
Phos
CZ
-110
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
175-225
P/P
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
200-250
P/E
PRIME
100
P
Boron
CZ
(100)-4
0.01-0.02
325-375
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
CdZnTe monocrystalline wafers
Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows:
S.No.
Parameters
Detail
1
Undoped Cd1_xZnxTe Single crystal substrates
From wafer to wafer x =0.040± 0.005
On one wafer x =0.040± 0.005
(Twin & micro twins free [...]
How Does Semiconductor Wafer Technology?
Edit by PAM-XIAMEN
The development of silicon wafer can be attributed to the development of Moore’s law. Because the silicon wafer for semiconductor is round, so the semiconductor silicon wafer is also called “silicon wafer” or “wafer”. Wafer is the “substrate” [...]
2020-04-21meta-author