GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author
PAM XIAMEN offers Mg – Metal Foil.
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 5x5x0.9-1.0mm, 1SP
Magnesium ( Mg ) Single Crystal Substrate , <0001> orn. 10x10x0.85-1.0mm, 1SP
Magnesium ( Mg) Polycrystaline Substrate , 10x10x2.0mm, as Cut
Magnesium ( Mg ) [...]
2019-05-08meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[110]
2″
250
P/E
FZ ~50
PF<111> SF 134°
n-type Si:P
[110]
2″
900
P/E
FZ 50-100
1 F @ <111> only
n-type Si:P
[110]
2″
280
P/P
FZ 16-30
1 F @ <111> only
n-type Si:P
[110]
2″
1000
P/P
FZ 15-18
1 F @ <1,-1,0>
n-type Si:P
[100]
2″
300
P/P
FZ 1,000-1,600
SEMI Prime
n-type Si:P
[100]
2″
300
P/P
FZ 600-1,200
SEMI Prime,
n-type Si:P
[100]
2″
2000
P/E
FZ >600
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
200
P/P
FZ 500-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ >300
SEMI Prime,
n-type Si:P
[100]
2″
500
P/P
FZ >200
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
FZ 50-110
SEMI Prime,
n-type Si:P
[100]
2″
280
P/P
FZ 20-70
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
FZ 10-40
SEMI Prime
n-type [...]
2019-03-07meta-author
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer.
Si wafer
Dia 2” x 260μm
FZ
(111)
Type n doped P
R > 300 ohm.cm
2 side spolished
With flats
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-01meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
n- Si:P
7±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±0.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
21
n- Si:P
150 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
22.5
n- Si:P
12±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28.5
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
26
n- Si:P
18±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
11
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27
n- Si:P
220 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27.5
n- Si:P
>250
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
28
n- Si:P
165 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
43688
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
9-11
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
11±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
8-12
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
30
n- Si:P
11±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
4±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
5
n- Si:P
1.5±10%
N/N/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author