Single crystal 3C-SiC substrate can be supplied with specifications as: https://www.powerwaywafer.com/3c-sic-wafer.html.
Silicon carbide (SiC) has excellent properties such as wide bandgap, high breakdown field strength, high saturation electron drift rate, and high thermal conductivity, and has important applications in fields such as new energy vehicles, photovoltaics, [...]
2024-04-26meta-author
PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author
PAM XIAMEN offers 8″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
8″
725
P/E
FZ 2,000-6,000 {2,500-3,700}
SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm
p-type Si:B
[100]
8″
725
P/E
8-12
SEMI notch Prime, TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.1-100.0
TEST grade, SEMI notch,TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.005-0.010
Prime, SEMI notch,TTV<4µm
n-type Si:P
[100]
8″
725
P/P
1-2
SEMI notch Prime, Up to 200 wafers available
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in [...]
2019-03-04meta-author
PAM XIAMEN offers Gallium Arsenide substrate with various sizes and low density. The GaAs wafer with the conductivity of N type, P type, or semi-insulating is for sale. In addition, you can offer your own wafer design to customize.
1. Main Parameters of Gallium Arsenide Substrate
MAIN [...]
2019-03-11meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P+
100
57,5 ± 2,5
100 ± 1
0.0 ± 5.0 °
0.001 – 100 Ohmcm
150 ± 0.5 mm
675 ± 200 µm
100
20
100
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5 °
> [...]
2019-02-25meta-author