Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser.
PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire?
Please click [...]
2023-04-26meta-author
Low temperature grown (LTG) gallium arsenide (GaAs) thin-film on GaAs substrate is available for photodetctors and photomixers. In addition, we can supply gaas epi wafer, for more GaAs thin film wafer please view https://www.powerwaywafer.com/gaas-wafers/gaas-epiwafer.html. LTG-GaAs is GaAs grown at a low temperature of 250-300 [...]
2022-08-12meta-author
PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass).
BK7 Glass
BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished
BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40)
BK7 (Schott) glass [...]
2019-04-18meta-author
GaN template with single side polished and atomic step is available, which is grown on 4H or 6H SiC C-axis (0001) substrate. GaN growth on SiC substrate can achieve lower thermal expansion, lower lattice mismatch, and excellent thermal conductivity, thereby giving full play to [...]
2021-09-16meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-2-1)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email [...]
2020-09-02meta-author