Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser.
PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire?
Please click the link https://youtu.be/uu0tCdmAA10 to watch the GaN LED wafer growth process from PAM-XIAMEN.
The epitaxy technology we adopt is MOCVD.
Firstly, the substrate is subjected to high-temperature treatment to clean the surface.
Secondly, grow a buffer layer of about 20-30nm at low temperatures due to the large mismatch between sapphire and GaN.
Thirdly, grow a N-type GaN layer of approximately 4um thick mainly as an active layer, providing radiative recombination electrons.
Then, grow a set of multiple quantum well (MQW), whose composition is determined by layer of InGaN.
Adjust the composition of indium in MQW to achieve wavelength you want.
The generation efficiency can be improved by optimizing the parameters of MQW, such as the number of wells, the periodic thickness of material group molecular wells, and doping concentration.
After that, grow a P-type AlGaN layer. A higher Al component can limit the carrier and significantly improve the luminous efficiency.
Finally, P-type GaN epilayer is grown to provide radiation recombination electrons for the MQW.
After epitaxial growth, annealing is required to activate the P layer, lowering the voltage.
For more information, please contact us email at firstname.lastname@example.org and email@example.com.