PAM XIAMEN offers 6″ FZ Silicon Wafer-6
N Type/Phosphorus doped
Orientation (111)
Thickness 400±10μm
Resistivity 2000-5000Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤15μm
Bow/Warp ≤20μm
FLATNESS(FPD)≤5μm
Front Side: Chemical Mechanical
Polished
Back side: Damaged, with SiO2/Al2O3
Particle ≤10 @≥0.3㎛
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
Helium implantation-induced layer splitting of InP in combination with direct wafer bonding was utilized to achieve low temperature layer transfer of InP onto Si(1 0 0) substrates. InP(1 0 0) wafers with 4 inch diameter were implanted by 100 keV helium ions with a dose of 5 × 1016 cm−2. Then [...]
2019-12-09meta-author
Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
2022-11-25meta-author
Silicon carbide (SiC) materials have significant advantages in key characteristics such as bandgap width and critical breakdown field strength, and can be used to make high voltage Schottky diodes. Currently, 650V-1700V SiC Schottky diodes are widely used in consumer, industrial, automotive and other fields. Schottky [...]
2023-11-08meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
CZ
-100
1-20
4900-5100
P/E
PRIME
50.8
N
Phos
CZ
-100
1-50
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-100
9900-10100
P/E
PRIME
50.8
N
Phos
FZ
-111
2k-5k
2000-5000
P/E
PRIME
50.8
N
Phos
CZ
-111
225-275
P/P
PRIME
50.8
N
Phos
CZ
-111
250-300
P/E
PRIME
50.8
N
Phos
FZ
-111
2000-5000
275-325
P/E
PRIME
50.8
N
Phos
CZ
-111
2900-3100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
5950-6050
P/E
PRIME
50.8
N
Phos
FZ
-111
150-200
9900-10100
P/E
PRIME
50.8
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
50.8
N
Phos
CZ
-110
225-275
P/P
PRIME
50.8
N
Phos
CZ
-110
250-300
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.005-.02
275-325
P/E
PRIME
50.8
P
Boron
CZ
(111) Off 4″ Towards (110)
.001-.005
300-350
P/E
PRIME
50.8
P
Any
CZ
Any
Any
2400-2600
P/E
TEST
50.8
P
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
P
Boron
CZ
-100
1-20
10-30
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-02-27meta-author