4H N type SiC wafer with Nitrogen doped is available, size from 2” to 4”. Dummy wafer and prime wafer are available. High quality single crystal SiC wafer are available for MBE growth research, electronics and optoelectronics industries. SiC wafer is a next-generation semiconductor material with [...]
2018-08-07meta-author
PAM XIAMEN offers 4″ silicon ignot.
Silicon ingot, per SEMI,
G 100.7±0.3mmØ,
p-type Si:B[100]±2.0°,
Ro=(0.001-0.003)Ohmcm,
Ground Ingot, NO Flats,
NOTE: visual rings of dopant on front and back side ARE NOT allowed
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-07-02meta-author
PAM XIAMEN offers 6″ Silicon Wafer-5 as follows, while silicon wafer list includes, but not limited to the following.
150mm wafers
Orientation100,
SSP,
Flat Semi Std
Thickness 530+/-15um
Doping N/A (no requirement)
1um thermal oxide
For more polished wafer specification, please see below link:
https://www.powerwaywafer.com/silicon-wafer
For 6″ Silicon Wafer-5 please see below link:
link 1.6″ [...]
2019-11-26meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-20meta-author
The hetero epitaxial materials used to make quantum cascade laser (QCL) are mainly InP based GaInAs/AlInAs material system, GaAs based GaAs/AlGaAs material system and antimonide material system. PAM-XIAMEN can provide InP based quantum cascade lasers thin film, as follows:
1. InGaAs/InAlAs/InP for Quantum Cascade Laser Diode
PAM210906 [...]
2023-07-21meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 1.0°
1 – 5 Ohmcm
200 ± 0.5 mm
650 ± 5 µm
20
3
35
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 0.5°
0.7 – 5.0 [...]
2019-02-25meta-author