PAM XIAMEN offers 4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm
4inch diameter wafer made of monocrystalline silicon with isolation oxide
Diameter 101.6mm
Polishing: one-sided for microelectronics
Type of conductivity and alloying: not specified
Surface orientation: not specified
Primary and secondary flat orientation: not specified
Thickness: 675 microns±20 microns
Wedge (TTV): less than 15 microns
TTV<15μm
Distortion: less than 35 microns
Thickness of the isolation oxide: at least 20 nm
Front side: polished.
Back side: lapped-etched
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers GaN on Sapphire for RF.
1. GaN HEMT Structure on Sapphire for RF Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
/
XRD(002)FWHM
/
Sheet Resistivity
/
AFM RMS (nm)of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
u-GaN cap layer
/
Al composition
20-30%
In composition
17% for InAlN
AlGaN barrier layer
20~30nm
AlN spacer
/
GaN [...]
2019-05-17meta-author
Cubic SiC films (3C–SiC) were deposited on (111) Si substrates by a vapor–liquid–solid tri-phase growth method. In such a process a thin copper layer, which was evaporated on the Si substrate prior to the growth, was melted at high temperature as the flux and [...]
Highlights
•Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells.
•Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS.
•The projected widths of the interface layers [...]
PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.
Major capability parameter
Material purity
>99.995%
Crystal structure
M6
Unit cell constant
a=5.154Å c=13.783 Å
Melt point(℃)
1650
Density
7.45(g/cm3)
Hardness
5.5~6(mohs)
Color
Colorless
Index of refraction
no=2.176 ne=2.180 (633nm)
Through scope
0.4~5.0mm
Resistance coefficient
1015wm
Dielectric [...]
2019-03-13meta-author
There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available:
1. Specifications of 100mm Silicon Carbide 4H N-type
Specificationsof Silicon Carbide N-type 100mm Diameter –
polytype
4H-SiC
A type
N-type SiC substrate
Resistance
0.015 [...]
2020-03-06meta-author