Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-111
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-111
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-110
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-110
1-20
500-550
P/E
PRIME
100
Any
Any
CZ
Any
Any
350-600
P/E
TEST
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
P
Zn
VGF
(100) off 2 deg twd <110>
0.01
375-425
P/E
epi
100
P
Zn
VGF
-100
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
10000000
610-660
P/P
EPI
100
Undoped
CZ
-100
>30
450-500
P/P
EPI
100
Undoped
CZ
-100
>30
500-550
P/E
EPI
100
N
Sb
CZ
(100)-9
<.4
150-200
P/E
EPI
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
EPI
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
EPI
100
P
Ga
CZ
-100
.01-.04
450-500
P/P
EPI
100
P
Ga
CZ
-100
.01-.04
500-550
P/E
EPI
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
100
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
100
Shipping Cassette
ePak
Holds25Wafers
Clean Room
101.6
N
Phos
CZ
-100
1-20
300-350
P/P
101.6
N
Phos
CZ
-100
1-20
350-400
P/E
101.6
P
Boron
CZ
-100
1-20
300-350
P/P
101.6
P
Boron
CZ
-100
1-20
350-400
P/E
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-03-04meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author
We quantified the size and concentration of Te inclusions along the lateral- and the growth-directions of a ∼6 mm-thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then [...]
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author
Will the Novel Coronavirus-caused Pneumonia affect the company Resumption?
Post by PAM-XIAMEN, Feb.11,2020
The novel coronavirus-caused pneumonia affect the company resumption in short term, but not too much, as currently the epidemic is under control well by quarantine measures. Currently the reworking rate is >=75%, estimate [...]
2020-02-11meta-author