PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (111) BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT): HEMT [...]
PAM XIAMEN offers high-quality Bi2Te3 single crystal. Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for [...]
III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the [...]
High-overtone bulk acoustic resonator (HBAR) combines the advantages of surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, providing high Q values, stable frequency operating range, and low frequency jitter noise, which can meet the needs of highly stable microwave signals. In addition, [...]
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