Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained with the near-uniform distribution both of electron concentration and of minority carrier lifetime in the GaAs wafers with thickness up to 1.6 mm. These in-depth distribution profiles have been first presented. Moreover, low-temperature photoluminescence (PL) of the GaAs wafers has been studied.