Distribution of defects and impurities in gallium arsenide wafers after surface gettering

Distribution of defects and impurities in gallium arsenide wafers after surface gettering

Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows high-resistivity material to be obtained with the near-uniform distribution both of electron concentration and of minority carrier lifetime in the GaAs wafers with thickness up to 1.6 mm. These in-depth distribution profiles have been first presented. Moreover, low-temperature photoluminescence (PL) of the GaAs wafers has been studied.

Source: sciencedirect

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2013-11-04 Defects, GaAs, Gettering, Impurity

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Distribution of defects and impurities in gallium arsenide wafers after surface gettering

Distribution of defects and impurities in gallium arsenide wafers after surface gettering

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