GaAs(111) crystal wafer
PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer:
1.Wafer List
GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
2019-04-22meta-author
Highlights
•A recessed structure was used on the GaAs/Si solar cells to reduce the current path.
•The associated series resistance was reduced by a recessed structure.
•The carrier recombination loss was improved due to pyramid-like recessed structure.
In this study, epitaxial layers of GaAs-based solar cells were grown [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
12.5±2.5
p- Si:B
2.35
n/p/p+
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
140±10
n- Si:P
33.6
n/p/p+
3″Øx381μm
n- Si:As[111-4°]
0.001-0.005
P/E
5.5
n- Si:P
0.31 – 0.33
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
37.5
n- Si:P
0.6±10%
n/n+
3″Øx525μm
n- Si:P[111]
0.001-0.005
P/E
4.5
n- Si:P
1.1 – 1.4
n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
5.5
n- Si:P
1.06±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
11
n- Si:P
17.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.7±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
2.1±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.8±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
16±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
13
n- Si:P
1.35±10%
n/n+
3″Øx381μm
n- [...]
2019-03-08meta-author
PAM-XIAMEN offers (10-11) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(10-11)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-20meta-author
PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates.
Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates
Main Parameters
Nb:SrTiO3
A
B
C
D
Nb Concentration (wt%)
Customized
0.7
0.5
0.05
Resistivity ohm-cm
Customized
0.007
0.05
0.08
Migration rates cm2/vs
Customized
8.5
8.5
6.5
Characteristics
Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators
Size
10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Ф15, Ф20, Ф [...]
2019-03-14meta-author
The objective of this work is to analyze the effects of argon ion irradiation process on the structure and distribution of Te inclusions in Cd1-xZnxTe crystals. The samples were treated with different ion fluences ranging from 2 to 8 × 1017 cm−2. The state of the samples before [...]
