Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
PAM XIAMEN offers BARIUM FLUORIDE BAF2 CRYSTAL.
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Barium fluoride, BaF2, crystal has good transmittance over a wide spectrum range, from 150 nm to 12.5 um. It has been widely used [...]
2019-03-11meta-author
Monocrystalline Germanium (Ge) ingot is provided with P type by PAM-XIAMEN. Germanium crystal does not contain large-angle grain boundaries or twin crystals. It has a diamond-shaped crystal structure and is an important semiconductor material. According different applications, single crystal germanium ingot can be divided [...]
2021-10-08meta-author
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
Highlights
•GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•Threading dislocation densities of around View the MathML source were found in each case.
•Lower dark currents and higher quantum efficiency was found [...]
Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p–i–n diode fabrication. The SEV-grown 4H-SiC material was investigated with scanning electron microscopy (SEM), atomic force microscopy (AFM), x-ray diffraction, photo-luminescence spectroscopy (PL), cathodo-luminescence (CL) spectroscopy, photocurrent method [...]
2019-12-02meta-author