Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?
A:According to our XRD data, all the three In concentration(10%,20%,30%), there is a peak at ~34.5 degree. A PL spectrum is preferred as attached.