PAM XIAMEN offers GaN SBD.
Parmeters
Specification
BV
300~650
If
1~20
Operation temp.
-55~150
Trr
<10
Package type
TO220-2L
TO220-3L
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
2019-05-17meta-author
The silicon carbide applications are covering a wide range, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current.
1. An Indispensable Inverter Fabricated on Silicon Carbide Substrate for [...]
2021-04-12meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-6
GE03. NOTE: Wafers must be free of striation marks
Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm,
p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm,
TTV<5µm, Bow<30µm, Warp<30µm,
Both-sides-polished, SEMI Flat (one),
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-23meta-author
Low Stress Nitride Silicon Wafers
PAM XIAMEN offers Low Stress Nitride Silicon Wafers.
Why use low stress nitride on your silicon wafers? Some uses include surface micromachining process that can fabricate the micromechanical structures when internal tensile stress and native nonporous morphology is required.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm.
4″ Si wafer
4″ Si, N-type, <100>, SSP
resistivity3000-4000Ωcm
thickness500±20μm
carrier lifetime>1ms(1000μm)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]
2019-08-22meta-author
Indium antimonide (InSb) compound semiconductor, as a direct bandgap semiconductor material, has low electron effective mass, high mobility, and narrow bandgap width. At low temperatures, InSb compound has a high absorption coefficient for infrared light, with a quantum efficiency greater than or equal to 80%. [...]
2024-01-19meta-author