Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation
Symbol
Min.
Typ.
Max.
Unit
Center wavelength
λ
—
808
—
nm
Output powe
P。
—
10.5
—
w
Operation mode
—
—
CW
—
—
Geometrical
Emitter width
w
—
190
—
μm
Cavity length
L
—
4000
—
μm
Chip width
W
—
500
—
μm
Chip height
H
—
150
—
μm
Electro Optical Data
Threshold curen
Ith
—
1.6
—
A
Operating current
Iop
—
10
—
A
Operating voltage
Vop
—
1.8
—
V
Slope efficiency
ηd=PJ(lop-Ith)
—
1.2
—
WIA
Total conversion efficiency
η=Po/(lopxVop)
—
58
—
%
Slow axis divergence
θn”
—
10
—
degrees
Fast axis divergence
θ1
—
35
—
degrees
Spectral width
△λ
—
3
—
nm
Polarization
—
—
TE
—
—
For more information, please contact us email [...]
2019-05-09meta-author
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:
1. N Type GaN Substrate Datasheet
1.1 4″(100mm) Undoped Free-standing GaN Substrate
Item
PAM-FS-GaN100-U
Conduction Type
Undoped
Size
4″(100)+/-1mm
Thickness
350-450um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
–
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
–
Resistivity(300K)
<0.5Ω·cm
Dislocation Density
<5×10^6cm-2
FWHM
–
TTV
<=35um
BOW
<=50um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area
≥ 90 [...]
2020-03-25meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2383
n–type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground
PAM2384
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers
PAM2385
n–type Si:P
[111] ±0.5°
4″
675
P/E
FZ [...]
2019-02-19meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author
PAM XIAMEN offers 6″ CZ Silicon Wafer
N Type/Arsenic doped
Orientation (100)
Thickness 625±15μm
Resistivity 0.002-0.004Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤10μm
TIR ≤5μm
STIR≤2μm (15mm*15mm)
Bow/Warp≤30μm
Front Side: Chemical Mechanical
Polished
Back side:
BSD Yes
Poly(Å) No
Oxide Back Seal(Å)5000±500 Å
Edge Oxide Strip(mm):0.8
Back side Laser Mark: No
Particle ≤10 @≥0.3㎛
METAL IMPURITIES:
≤ 2.5E10(Fe Cr Cu Ni)at/㎠
≤ 5E10(Al Zn [...]
2021-03-18meta-author