The SiC wafer application fields are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of silicon carbide wafer usage are [...]
2021-04-13meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/P
1-100
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
525
P/E
0.3-0.5
SEMI
n-type Si:P
[100]
4″
300
P/E
0.29-0.31
SEMI Prime
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Not sealed both sides scratched
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Both sides with scratches
n-type Si:P
[100]
4″
200
P/E
0.10-0.15
SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb
[100]
4″
525
P/E
0.020-0.022
Prime
n-type Si:Sb
[100-6° towards[110]] ±0.5°
4″
525
P/E
0.015-0.020
SEMI Prime
n-type Si:Sb
[100]
4″
525
P/E
0.011-0.014
Prime
n-type Si:Sb
[100]
4″
305 ±3
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime, TTV<5μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime
n-type Si:As
[100]
4″
525
P/E
0.0025-0.0035
SEMI Prime
n-type [...]
2019-03-05meta-author
A process model of wafer thinning by diamond grinding
This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]
PAM-XIAMEN, a epi service supplier, offers service for processing laser wafer epitaxial growth on polished GaAs substrate and epi on bare substrates for power devices. In the PAM-XIAMEN’s wafer epitaxy foundry, GaAs epitaxy wafer with quantum well laser structure can be processed with the [...]
2018-04-08meta-author
PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
The behaviour of n-6H SiC in HF- and KOH-based electrolytes is studied. It is shown that at the room temperature the dissolution of SiC in these electrolytes is accompanied by a number of side effects, such as passivation of the etched surface with an [...]
2019-03-25meta-author