PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
1. SPECT, γ-imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel pitch
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
+30℃~+40℃
Energy range
20KeV~700MeV
Energy resolution(22℃)
Average<6.5%@122KeV(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Defined [...]
2019-04-24meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
2021-06-24meta-author
Dummy grade single crystal indium phosphide wafer is available with doping S grown by VGF. The electron concentration of the N-type indium phosphide wafer reaches 1018cm-3, and the indium phosphide resistivity is very low, generally 10-2~10-3Ω·cm. It is mostly used in high-speed optoelectronic devices, such as LD, LED, [...]
2021-08-06meta-author
PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates.
Single crystal SrTiO3 doped with 0.05 wt% Fe
Specifications:
Crystal Structure:Cubic
Growth Method:Vernuil Method
Lattice Parameter:a=3.905Å
Fe Doping Concentrations:0.05%
Melting Point:2080C
Density:5.122 g/ccm
Hardness:6-6.5 Mohs
Thermal expansion:10.3 x 10^-6/K
Dielectric Constant:5.2
Dielectric Loss: ~5×10^-4(300K) ~3×10^-4(77K)
Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request
Typical thickness:0.5mm or 1.0mm
Orientations:<100>、<110>、<111>
Miscut:0.5 degree
Surface Polishing:single or double [...]
2019-03-14meta-author