PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as [...]
Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, [...]
2019-04-25meta-author
PAM XIAMEN offers high-quality Al2O3 (Sapphire).
A-plane (11-20)
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP
Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP
Al2O3 – [...]
2019-04-16meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-7
GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm,
Both-sides-polished, One SEMI Flat
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Physical Constants
Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific [...]
2019-02-26meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author