Highlights
•The performance of colloidal silica and ceria based slurries on CMP of 6H-SiC substrates were evaluated.
•There was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries.
•For the ceria based slurries, a higher MRR was obtained, especially in strong [...]
Due to the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy, SiC material can meet the new requirements of modern electronic technology for high temperature, high frequency, high power, high voltage and radiation resistance, [...]
2022-09-16meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of [...]
2024-03-19meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
SSP
Boron
P
100
57,5 ± 2,5
110 ± 0,20
0.0 ± 0.2 °
1 – 10 Ohmcm
150.0 ± 0.2 mm
600 ± 5 µm
3
6
SSP
Boron
P
111
0,0 ± 0,0
110 ± 1
0.0 ± 0.2°
25 – [...]
2019-02-25meta-author
Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage (Vth) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure [...]