PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
350
P/P
FZ 2,700-3,250
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
900
C/C
FZ >50
SEMI Prime, 1Flat, MCC Lifetime>6,000μs
n-type Si:P
[100]
6″
825
C/C
FZ 7,000-8,000 {7,025-7,856}
SEMI, 1Flat, Lifetime=7,562μs
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >3,500
SEMI Prime, 1Flat (57.5mm)
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
790 ±10
C/C
FZ >3,500
SEMI, 1Flat
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
P/P
FZ >1,000
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark
n-type Si:P
[100-6° towards[111]] ±0.5°
6″
675
BROKEN
FZ >1,000
SEMI notch Test, Broken into many large pieces. One piece [...]
2019-03-04meta-author
The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]
2022-03-25meta-author
PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.
1. Specifications of SiC Ingots
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ [...]
2018-08-07meta-author
Study of Highly Pixelated CdZnTe Detector for PET Applications
We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-11meta-author
Issues for the larger diameter epitaxial wafer
In order to establish the epitaxial wafer as the main substrate for semiconductor devices produced on large diameter wafers over 300 mm, the epitaxial wafer must satisfy stringent requirements in terms of both quality and costs. Before proceeding [...]