PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates that we have in stock!
Inches | Cust class | Dopant | Type | Orientation | PFL length | PFL direction | SFL | Off orientation | Resistivity | Diameter | Thickness | Bow | TTV | Warp |
6 | DSP | Antimony | N+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.01 – 0.02 Ohmcm | 150 ± 0.2 mm | 300 ± 10 µm | 30 | 10 | 30 | |
6 | DSP | Arsenic | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | <0.0035 Ohmcm | 150.0 ± 0.2 mm | 430 ± 5 µm | 60 | |||
6 | DSP | Arsenic | N+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | <0.0035 Ohmcm | 150.0 ± 0.2 mm | 430 ± 5 µm | 60 | |||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.005 – 0.025 Ohmcm | 150 ± 0.2mm | 400 ± 10µm | 5 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.2 ° | 1 – 20 Ohmcm | 150 ± 0.2 mm | 400 ± 5 µm | 50 | 2 | 50 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 2.55 – 3.45 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 5 Ohmcm | 150 ± 0.2 mm | 650 ± 5 µm | 60 | 2 | 60 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 90 ± 5.0 °, 37.50 ± 2.50 mm | 0.0 ± 0.2 ° | 0.017 – 0.022 Ohmcm | 150 ± 0.2 mm | 381 ± 5 µm | 1 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | >1 Ohmcm | 150 ± 0.2 mm | 525 ± 12.5 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 5 Ohmcm | 150 ± 0.2 mm | 450 ± 10 µm | 60 | 3 | 60 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 0.007 – 0.020 Ohmcm | 150.0 ± 0.2 mm | 400 ± 25 µm | 29,99 | 2,99 | 29,99 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | < 0,005 Ohmcm | 150 ± 0.2 mm | 625 ± 15 µm | 60 | 60 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0 ± 0.5° | 1 – 20 Ohmcm | 150 ± 0.5 mm | 500 ± 25 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 0,5 | 110 ± 0,30 | 0.0 ± 0.5 ° | 2 – 10 Ohmcm | 150 ± 0.2 mm | 380 ± 4 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.2° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 600 ± 5 µm | 20 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.1° | 0.07 – 0.13 Ohmcm | 150 ± 0.2 mm | 500 ± 5 µm | 25 | 1 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 5 Ohmcm | 150 ± 0.2 mm | 300 ± 5 µm | 2 | |||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5 ° | 0.001 – 0.02 Ohmcm | 150 ± 0.2 mm | 650 ± 5 µm | 1 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5 ° | 6 – 8.5 Ohmcm | 150.0 ± 0.2 mm | 380 ± 5 µm | 5 | 60 | ||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 90 ± 5.0 °, 37.50 ± 2.50 mm | 0.0 ± 0.5 ° | 0.020 – 0.025 Ohmcm | 150 ± 0.2 mm | 300 ± 7.5 µm | 1,4 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.03 ° | 2.4 – 3.6 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 0,5 | 110 ± 0,30 | 0.0 ± 0.5 ° | > 0.3 Ohmcm | 150 ± 0.5 mm | 400 ± 50 µm | 60 | 30 | 60 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 6 – 8.5 Ohmcm | 150.0 ± 0.2 mm | 380 ± 10 µm | 5 | 40 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2° | 1 – 5 Ohmcm | 150 ± 0.5 mm | 400 ± 5 µm | 30 | 1 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.1 ° | 0.07 – 0.13 Ohmcm | 150.0 ± 0.2 mm | 380 ± 5 µm | 25 | 1 | ||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 0.010 – 0.020 Ohmcm | 150 ± 0.2 mm | 1000 ± 5 µm | ||||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 30 – 50 Ohmcm | 150 ± 0.3 mm | 300 ± 5 µm | 30 | 1 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 2 – 20 Ohmcm | 150 ± 0.2 mm | 310 ± 10 µm | 5 | |||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 0.005 – 0.025 Ohmcm | 150 ± 0.2 mm | 290 ± 10 µm | 5 | |||
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0° | 0.005 – 0.025 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 5 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 29,99 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 3 – 5 Ohmcm | 150 ± 0.5 mm | 390 ± 7 µm | 3 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,0 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 3 – 7 Ohmcm | 150 ± 0.2 mm | 385 ± 5 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 400 ± 5 µm | 0,8 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 600 ± 5 µm | 0,8 | |||
6 | DSP | Boron | P | 100 | 47,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5 ° | 70 – 130 Ohmcm | 150 ± 0.5 mm | 1000 ± 10 µm | 50 | 5 | 50 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 400 ± 5 µm | 40 | 1 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,25 | 0.0 ± 0.25° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 280 ± 1.5 µm | 1,25 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,20 | 0.0 ± 0.2 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 650 ± 5 µm | 1 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 400 ± 5 µm | 30 | 2 | 29,99 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 100 ± 0,50 | 90 ± 5.0 °, 20.00 ± 2.50 mm | 0.0 ± 0.5° | 5 – 7 Ohmcm | 150 ± 0.5 mm | 483 ± 5 µm | 20 | 4 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5 ° | 5 – 8.5 Ohmcm | 150.0 ± 0.5 mm | 380 ± 5 µm | 5,5 | 30 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 1.0° | 1 – 10 Ohmcm | 150 ± 0.5 mm | 600 ± 5 µm | 80 | 5 | 80 | |
6 | DSP | Boron | P+ | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 1.0° | 0.01 – 0.02 Ohmcm | 150 ± 0.5 mm | 620 ± 5 µm | 80 | 5 | 80 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.2 ° | 1 – 10 Ohmcm | 150 ± 0.2 mm | 600 ± 5 µm | 0,8 | |||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,50 | 0.0 ± 0.5° | > 10 Ohmcm | 150 ± 0.5 mm | 625 ± 15 µm | 50 | 2 | 50 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 1.0 ° | 1 – 3 Ohmcm | 150 ± 0.5 mm | 380 ± 12 µm | 5 | 40 | ||
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 1 | 0.0 ± 0.5° | 5 – 8.5 Ohmcm | 150 ± 0.5 mm | 525 ± 5 µm | 30 | 2 | 30 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.03 ° | 2.4 – 3.6 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 | |
6 | DSP | Boron | P | 100 | 57,5 ± 2,5 | 110 ± 0,10 | 0.0 ± 0.03 ° | 2.4 – 3.6 Ohmcm | 150 ± 0.2 mm | 400 ± 10 µm | 40 | 3 | 40 |
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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