An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample [...]
PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13meta-author
PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
Semiconductor doping is a key process step in the production of integrated circuits. In the semiconductor production process, crystalline silicon is used as the substrate material of the wafer, and its electrical conductivity is very poor. Silicon becomes a useful semiconductor only when small [...]
2022-05-27meta-author
PAM XIAMEN offers Silver Conductive Film.
Planarized Silver Nanowire Film(230mm W x 1 M L x 125 microns, 12 ohm/sq )on Heat Stabilized PET for thin film applications – Ag-PET-12K-1
Planarized silver nanowire film on heat stabilized PET for thin film applications
Width 9in./230mm [...]
2019-04-26meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2485
p–type Si:B
[100]
4″
3000
P/E
1–100
SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2486
p–type Si:B
[100]
4″
3000
P/E
1–30
SEMI, 2Flats, Individual cst
PAM2487
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2488
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, [...]
2019-02-19meta-author