5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author
5-5 SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
2018-06-28meta-author
3-1. Large Point Defects
Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
2018-06-28meta-author
2-12.Edge Exclusion
The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and [...]
2018-06-28meta-author
5-2-2-1 SiC Crystallography: Important Polytypes and Definitions
Silicon carbide occurs in many different crystal structures, called polytypes. A more comprehensive
introduction to SiC crystallography and polytypism can be found in Reference 9. Despite the fact that
all SiC polytypes chemically consist of 50% carbon atoms covalently bonded [...]
2018-06-28meta-author
5-7 Future of SiC
It can be safely predicted that SiC will never displace silicon as the dominant semiconductor used for the manufacture of the vast majority of the world’s electronic chips that are primarily low-voltage digital and analog chips targeted for operation in normal [...]
2018-06-28meta-author