Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether [...]
PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25meta-author
PAM XIAMEN offers 8″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/E 8″(200.0±0.2mm) Ø×1,000±25µm,
p-type Si:B[111]±0.5°, Ro: <100 Ohmcm,
TTV<6µm, Bow<60µm, Warp<60µm,
One-side-polished, Particles: ≤10@≥0.3µm,
Back-side etched, SEMI notch,
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-02meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2121
p-type Si:B
[110]
2″
380
P/P
FZ 130–160
1 F @ <111> only
PAM2122
p-type Si:B
[110]
2″
280
P/E
FZ 120–300
1 F @ <111> only
PAM2123
p-type Si:B
[100]
2″
300
P/P
FZ 400–1,000
Prime, NO Flats, hard cst
PAM2124
p-type Si:B
[100]
2″
300
P/E
FZ >50
SEMI Prime, 2Flats, hard cst
PAM2125
p-type Si:B
[111]
2″
300
P/E
FZ 730–1,050
SEMI Prime, [...]
2019-02-18meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
2019-03-08meta-author