AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author
Silicon transient voltage suppressor (TVS) is one of silicon diodes, and has extremely fast response speed (less than 1ns) and relatively high surge current absorption ability, and can be used to protect equipment or circuits, even integrated circuits, MOS devices, hybrid circuits, and other voltage sensitive semiconductor [...]
2023-09-01meta-author
PAM XIAMEN offers Aluminium Crystal & Substrates (single crystal).
Aluminium Single Crystal Boule Grown by Bridgemen method.
Aluminum Single Crystal Substrate: <100>, 2″ Dia. x1.0 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, 10x10x0.5 mm, 1 side polished
Aluminum Single Crystal Substrate: <100>, [...]
2019-05-08meta-author
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less [...]
Characterization of LT GaAs carrier lifetime in multilayer GaAs epitaxial wafers by the transient reflectivity technique
A methodology for determining the carrier lifetime of LT GaAs buffer layers in GaAs multilayer wafers utilizing the femtosecond transient reflectivity technique is introduced. Experimental results and computer simulations performed as a function of [...]
PAM-XIAMEN offers C doped GaAs wafer, which is also called semi-insulating GaAs wafer. Undoped gallium arsenide wafer is applied to the field of microelectronics and mainly used to make radio frequency (RF) power devices. GaAs single crystal growth methods include VGF, VB, and LEC.
No1. C [...]
2020-04-03meta-author