CdZnTe monocrystalline wafers
Xiamen Powerway Advanced Material Co.,Ltd., provide CdZnTe monocrystalline wafers in different size for HgCdTe substrate epitaxy. And now PAM-XIAMEN offer specification as follows:
| S.No. | Parameters | Detail |
| 1 | Undoped Cd1_xZnxTe Single crystal substrates | From wafer to wafer x =0.040± 0.005 |
| On one wafer x =0.040± 0.005 | ||
| (Twin & micro twins free substrates) | ||
| 2 | Substrates Sizes & Quantity | 15mm X 15mm ± 0.05 mm, Quantity –60 Nos. |
| 25mm X 25mm ± 0.05 mm, Quantity –30 Nos | ||
| 30mm X 30mm ± 0.05 mm, Quantity –30 Nos | ||
| Parallelism | <=3 arc minutes | |
| 3 | Substrate Thickness | 1mm ± 10 ~m |
| Flatness of B Face | < 5 um | |
| 4 | Surface polishing | A & B Face Chemo-mechanically polished |
| Mechanically & Chemically | B Face Epi-ready with roughness (Ra) < 2nm | |
| (mirror polished surface-Ready to use for MBE Growth) | ||
| 5 | Face Identification | Mark on “A” Face |
| (All wafers shall be well identified for the A-face) | ||
| 6 | IR Transmission % | > 60% in 2 to 25 iJm wavelength range |
| 7 | Substrate Surface Orientation | ’（211） |
| 8 | Orientation Accuracy | < ± 0.25° |
| 9 | Average Etch Pit density | <= 1X10^5cm2(no cellular structure) |
| 10 | X-ray DCRC FWHM | < 18 arc sec |
| 11 | X-ray DCRC FWHM peak shift from one end of the wafer to other end | < 30 arc sec |
| 12 | Tellurium Precipitatellnclusion | Free of Tellurium precipitatellnclusion larger than 2 um (Te ppt density <1 04/cm2 ) |
For more information, please visit our website:www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com