SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of [...]
2024-03-19meta-author
GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
2012-12-04meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[5,5,12] ±0.5°
3″
380
P/E
1-10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/P
>10
SEMI Prime
p-type Si:B
[211] ±0.5°
3″
525
P/E
>10
SEMI Prime
p-type Si:B
[111-28° towards[001]] ±0.5°
3″
400
P/E
>20
SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111-4°] ±0.5°
3″
380
P/E
8-12
SEMI Prime
p-type Si:B
[111] ±0.5°
3″
508
E/E
0.792-1.008
SEMI TES, TTV<2μm, Epak cst
p-type Si:B
[111-4°] [...]
2019-03-06meta-author
The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]
2019-08-12meta-author
PAM XIAMEN offers 2″ FZ Intrinsic Si Wafer SSP
2″ FZ Intrinsic Si Wafer SSP
2″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 2’’ x 280µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, [...]
2021-01-08meta-author