PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide
2″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces availability of InGaN substrate materials. InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based [...]
2012-12-04meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[211] ±0.1°
4″
275
P/P
FZ >3,000
SEMI Prime, TTV<2μm
Intrinsic Si:-
[111] ±0.5°
4″
500
P/P
FZ >25,000
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
525
P/E
4-6
SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF
p-type Si:B
[110]
4″
525
P/E
2-10
PF<111> SF 109.5°
p-type Si:B
[100]
4″
300
P/E
800-5,400
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
10-20
SEMI Prime
p-type Si:B
[100]
4″
3000
P/E/P
10-15
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
250
P/E
8-12
SEMI Prime
p-type Si:B
[100]
4″
275
P/P
7-14
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
300
P/E
7-14
SEMI Prime, TTV<5μm
p-type [...]
2019-03-05meta-author
PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-20meta-author