Low Temperature Grown InGaAs

Low Temperature Grown InGaAs 

PAM-XIAMEN offer low temperature grown InGaAs on GaAs Substrate(LT-InGaAs) for InGaAs Photo Conductive antenna substrate for THz

2″ LT-InGaAs Wafer Specification
Diameter(mm)Ф 50.8mm ± 1mm
Thickness 0.5-3um
Useable Surface Area≥90%
Polishing: Single side polished
Structure: LT-InGaAs on GaAs
Substrate: GaAs substrate
In composition from 0.05 to 0.40

We also can offer LT-GaAs(low temperature grown GaAs on GaAs Substrate), please below detail spec:

2″ LT-GaAs Wafer Specification
Diameter(mm)Ф 50.8mm ± 1mm
Thickness 1-2um
Marco Defect Density≤5 cm-2
Resistivity(300K) >10^8 Ohm-cm
Carrier lifetime<15ps or <1ps
Dislocation Density<1×10^6cm-2
Useable Surface Area≥80%
Polishing: Single side polished
Substrate: GaAs substrate

Or you can click below detail information:

https://www.powerwaywafer.com/terahertz.html

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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