PAM-PA02 is a large size pixel detector based on CZT crystal. They have an extremely high energy resolution and space resolution with a low dose incident of radiation.
1. SPECT, γ-imaging Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
25.4×25.4mm2
Thickness
5.0mm
Pixel size
1.5×1.5mm2
Pixel pitch
1.6mm
Pixel array
16×16
Electrode material
Au
Operation temperature
+30℃~+40℃
Energy range
20KeV~700MeV
Energy resolution(22℃)
Average<6.5%@122KeV(>13% means defective pixel)
Photo-Peak Efficiency(PPE)
Defined [...]
2019-04-24meta-author
After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]
2021-04-02meta-author
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author
PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html.
The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap [...]
2024-03-26meta-author
Antireflection-Coated Blue GaN Laser Diodes in an External Cavity and Doppler-Free Indium Absorption Spectroscopy
Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an [...]
2013-04-01meta-author
MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation [...]