PAM-XIAMEN offers PSS patterned sapphire substrate for high brightness GaN based LED EPI growing application. The patterned sapphire substrate wafer is to grow a dry etching mask on the sapphire substrate. The mask is engraved by a standard photolithography process. Then, the sapphire is etched by ICP etching [...]
2021-04-28meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
508
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
Prime
n-type Si:P
[211] ±0.5°
3″
1016
P/P
FZ 25-75
SEMI TESt
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 10,000-12,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±0.5°
3″
415 ±15
BROKEN
FZ 10,000-12,000
Broken E/E wafers, in two pieces, Lifetime>1,500μs,
n-type Si:P
[111] ±0.5°
3″
2500
C/C
FZ 7,000-13,000
SEMI, Individual cst
n-type Si:P
[111] ±0.5°
3″
370
P/E
FZ >5,000
SEMI [...]
2019-03-06meta-author
PAM XIAMEN offers Silicon Nitride film on Silicon Wafer.
Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm
Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-29meta-author
Dia 3 inch semi insulating GaAs substrate is available. GaAs materials are mainly divided into two categories: semi-insulating gallium arsenide material and semiconductor gallium arsenide material. Here we will discuss the semi-insulating gallium arsenide material. Semi-insulating property is a basic physical property of gallium arsenide material, and it [...]
2020-03-10meta-author
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Unit cell constant
a=5.17 A c=6.26 A
Melt point(℃)
1900
Density
2.62(g/cm3)
Hardness
7.5(mohs)
Size
10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal [...]
2019-03-13meta-author