PAM XIAMEN offers Silicon Wafer Thickness:275+- 25µm.
Silicon Wafer ,2in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm ,275+- 25µm Thickness,SSP,
PRIME -Si Wafers,Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
High-overtone bulk acoustic resonator (HBAR) combines the advantages of surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, providing high Q values, stable frequency operating range, and low frequency jitter noise, which can meet the needs of highly stable microwave signals. In addition, [...]
2023-11-15meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
100
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
100
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
100
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/E
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/P
PRIME
100
P
Boron
CZ
-100
1-20
350-400
P/P
PRIME
100
P
Boron
CZ
-100
1-20
375-425
P/E
PRIME
100
P
Boron
CZ
-100
.001-.005
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.005-.02
450-500
P/P
PRIME
100
P
Boron
FZ
-100
>3000
450-500
P/P
PRIME
100
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.001-.005
500-550
P/E
PRIME
100
P
Boron
CZ
-100
.005-.02
500-550
P/E
PRIME
100
P
Boron
FZ
-100
>3000
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/WTOx
100
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
100
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
Light-emitting InGaN/GaN Heterojunction Bipolar Transistors
The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = [...]
2012-12-06meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:
Description
Growth Method
—
MCZ
Single crystal size
inch
2 – 8
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks:The above parameters can be customized.
FAQ about MCZ Silicon Wafers
Q:This is just a curiosity, but let me ask about the production method of [...]
2019-02-27meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers (100).
2″ Diameter Wafer
2″ wafers (100)
2“ Undoped Ge (100)
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, 1SP, resistivities: >50 ohm-cm
Ge Wafer (100) Undoped, 2″ dia x 0.5 mm, resistivities: >50 ohm-cm, 2SP [...]
2019-04-23meta-author