The typical structure of InAs quantum dot (QD) layers on InP substrate is available with wavelength of 1.55um for QD photodetector. Quantum dot is called semiconductor nanocrystals (NCs), which refer to three-dimensional constrained nanomaterials with a radius smaller than or close to the exciton [...]
2021-09-17meta-author
PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as [...]
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100-6°]
4″
525
P/E
1-100
SEMI Prime
p-type Si:B
[100]
4″
350
P/E
0.08-0.12
SEMI Prime, TTV<5μm
p-type Si:B
[100-4°] ±0.5°
4″
381
P/E
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
800
P/EP
0.01-0.02
SEMI Prime
p-type Si:B
[100]
4″
3100
P/P
CZ 0.006-0.009
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
525
P/E
0.0042-0.0047
SEMI Prime
p-type Si:B
[100]
4″
150 ±15
P/P
0.001-0.005
SEMI Prime, TTV<2μm
p-type Si:B
[111-3°]
4″
300
P/E
3-4
SEMI Prime
p-type Si:B
[111-3°]
4″
400
P/E
0.015-0.018
SEMI Prime
p-type Si:B
[111]
4″
525
P/E
0.005-0.006
SEMI Prime
p-type Si:B
[111-1.5°]
4″
525
P/E
0.002-0.004
SEMI Prime
p-type Si:B
[111]
4″
300
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° [...]
2019-03-06meta-author
PAM XIAMEN offers 4″ Epitaxial Silicon Wafer. If necessary, we can do SRP (spreading resistance profile) test for you.
Item
Parameter
Spec
Unit
1
Growth Method
CZ
2
Diameter
100+/-0.5
mm
3
Type-Dopant
P- Boron
4
Resistivity
0.002 – 0.003
ohm-cm
5
Resistivity Radial Variation
<10
%
6
Crystal Orientation
<111> 4 +/- 0.5
degree
7
Primary Flat
Orientation
Semi
degree
Length
Semi
mm
8
Secondary Flat
Orientation
Semi
degree
Length
semi
mm
9
Thickness
525 +/- 25
μm
10
TTV
≦10
μm
11
Bow
≦40
μm
12
Warp
≦40
μm
13
Front Surface
polished
14
Backside
etched
—
5000 +/-10% Angstoms SiO2
15
Surface Appearance
no Cratches, haze, edge chips, orange peel, defects,contamination
—
16
Edge [...]
2021-03-16meta-author
AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author